发明名称 REDUCED-PRESSURE DRYING UNIT AND COATING FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a reduced-pressure drying unit to be used for forming a coating film comprising a resist film, for example, on a semiconductor wafer, by which film thickness homogeneity is enhanced by the control of a temperature within a wafer face. SOLUTION: The reduced-pressure drying unit of the present invention is composed of a sealed container provided with an install part to install a substrate coated with a coating liquid comprising a mixture of a component of a coating film and a solvent, a heating means for heating the substrate installed on the install part, an evacuation means connected via an exhaustion path to the sealed container for generating a reduced-pressure atmosphere within the sealed container and thus volatilizing the solvent from the coating liquid on the substrate, and a material being provided on the install part and having a heat conductivity differing from that of the install part. With such a composition, the wafer temperature can be controlled in the wafer face using differences in heat conductivity, so that film thickness homogeneity within the face is improved. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007118007(A) 申请公布日期 2007.05.17
申请号 JP20070001664 申请日期 2007.01.09
申请人 TOKYO ELECTRON LTD 发明人 KITANO TAKAHIRO;SUGIMOTO SHINICHI;HIRAKAWA HISAYA;HAMA MANABU
分类号 B05C9/14;B05D3/12;H01L21/027 主分类号 B05C9/14
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