发明名称 Methods and apparatus for incorporating nitrogen in oxide films
摘要 In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
申请公布号 US2007111458(A1) 申请公布日期 2007.05.17
申请号 US20060446444 申请日期 2006.06.02
申请人 APPLIED MATERIALS, INC. 发明人 SATO TATSUYA;LIU PATRICIA M.;CHRISTODOULOU FANOS
分类号 H01L21/336 主分类号 H01L21/336
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