| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor element including a capacitor whose lower electrode is configured with a film of a metal selected from platinum group and whose capacitor dielectric film is configured with a high-k dielectric film on the ground thereof, by which occurrence of peeling of the lower electrode is fewer than ever. SOLUTION: The manufacturing method for a semiconductor element includes: a step for forming a polysilicon film 41a on the ground 11 thereof; a step for forming a lower electrode 15 containing a metal selected from platinum group, on the polysilicon film; a step for subjecting heat treatment to the polysilicon film and the lower electrode under a non-oxidizing atmosphere; a step for forming a capacitor dielectric film 17 configured with a high-k dielectric film, on the lower electrode; and a step for forming an upper electrode 19 on the capacitor dielectric film 17. COPYRIGHT: (C)2007,JPO&INPIT
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