METHOD OF MANUFACTURING NITRIDE GALLIUM SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride gallium substrate with low cost by simplifying a forming process. SOLUTION: The method of manufacturing the nitride gallium substrate includes a step of forming a porous nitride gallium substrate 11a having a thickness of 10 nm to 1000 nm by etching a nitride gallium substrate 11 in an atmosphere of HCl and NH3gas in a reaction chamber of an HVPE apparatus, and further includes a step of forming a nitride gallium growth layer 20 in a single reaction chamber by in situ process. COPYRIGHT: (C)2007,JPO&INPIT