| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase change memory element, and method for operating and manufacturing the element. SOLUTION: The phase change memory element includes a switching element and a storage node coupled with the element. The storage node includes a lower electrode coupled with the switching element, a phase change layer formed on the lower electrode and an upper electrode formed on the phase change layer. The lower and upper electrodes are made of different kinds of thermoelectric materials with a higher melting point than that of the phase change layer. The upper surface of the lower electrode is recessed, and a lower electrode contact layer is further provided between the lower electrode and the phase change layer. In addition, the thickness of the phase change layer is 100 nm or less. The lower electrode is made of an N-type thermoelectric material and the upper electrode is made of a P-type thermoelectric material, or vice versa. Seebeck coefficients of the lower electrode, the phase change layer and the upper electrode may be different. COPYRIGHT: (C)2007,JPO&INPIT
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