| 发明名称 |
Trench mosfet |
| 摘要 |
The invention relates to a trench MOSFET with drain ( 8 ), dpi ft region ( 10 ) body (12) and source ( 14 ). In order to improve the figure of mepit for use of the MOSFET as control and sync FETs, the trench ( 20 ) is partially filled with dielectric ( 24 ) adjacent to the drift region ( 10 ) and a graded doping profile is used in the dpift region ( 10 )
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| 申请公布号 |
US2007108515(A1) |
申请公布日期 |
2007.05.17 |
| 申请号 |
US20040580619 |
申请日期 |
2004.11.26 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS, N.V. |
发明人 |
HUETING RAYMOND J.;HIJZEN ERWIN A. |
| 分类号 |
H01L29/94;H01L29/06;H01L29/08;H01L29/423;H01L29/78 |
主分类号 |
H01L29/94 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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