| 摘要 |
In a nonvolatile semiconductor storage device, memory cell units of two-transistor structure are arranged in rows and columns and adjacent rows of memory cell units are isolated by a trench-type device isolation region. The spacing between the control gate electrode of a cell transistor and the gate electrode of a select gate transistor which adjoin in the column direction in each memory cell unit is set shorter than the spacing between the control gate electrodes of cell transistors which adjoin in the column direction in two adjacent memory cells arranged in column and the spacing between the gate electrodes of select gate transistors which adjoin in the column direction in two adjacent memory cells arranged in column.
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