| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a germanium ELO layer without defect. <P>SOLUTION: This method for manufacturing a germanium photo detecting device includes a step for preparing a silicon substrate, a step for forming and flattening a silicon oxide film, a step for forming a contact hole in the silicon oxide film, a step for forming a first epitaxial germanium layer on the silicon oxide film and in the contact hole, a step for forming an intrinsic germanium layer on the first epitaxial germanium layer and the exposed silicon oxide film, a step for forming a second epitaxial germanium layer on the intrinsic germanium layer and the exposed silicon oxide film, a step for forming a protective layer comprising at least one kinds selected from a group of polysilicon, polysilicon-germanium and In<SB>2</SB>O<SB>3</SB>-SnO<SB>2</SB>, and a step for removing the protective layer for demarcating individual detection part. <P>COPYRIGHT: (C)2007,JPO&INPIT |
