发明名称 PIEZOELECTRIC/ELECTROSTRICTIVE FILM AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To increase a degree of freedom in selecting a substrate material for a piezoelectric/electrostrictive film type device. <P>SOLUTION: The piezoelectric/electrostrictive film is formed on a solid-phase carrier 2, the piezoelectric/electrostrictive film including an incompletely bonding region having a predetermined pattern on the solid-phase carrier 2, and a bonding region which bonds on the surface of the solid-phase carrier so as to separate the incompletely bonding region. By joining the piezoelectric/electrostrictive film 10 to a substrate, and separating the solid-phase carrier and the piezoelectric/electrostrictive film 10 in the bonding region 30; the incompletely bonding region 20 is transferred onto the substrate. The piezoelectric/electrostrictive film type device is fabricated using the transferred incompletely bonding region 20 as a piezoelectric/electrostrictive film. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007123353(A) 申请公布日期 2007.05.17
申请号 JP20050310173 申请日期 2005.10.25
申请人 NGK INSULATORS LTD 发明人 OWADA IWAO;KOBAYASHI NOBUYUKI
分类号 H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/313;H01L41/314;H01L41/43 主分类号 H01L41/09
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