| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor having an active layer capable of being deposited at a room temperature by suppressing variations in performance of individual products. SOLUTION: By using InGaSnO<SB>x</SB>(4≤x≤5) as a material of the thin-film transistor, an amorphous InGaSnO<SB>x</SB>(4≤x≤5) semiconductor can be formed on a flexible board at a room temperature with a wide process window, and the thin-film transistor having high bending strength can be manufactured while suppressing the variations between products at the minimum. Further, a sputtering method, especially, an InGaSnO<SB>5</SB>target is used as the manufacturing method to make an oxygen flow rate 2-4%, and thus, mobility of about 1 cm<SP>2</SP>/Vs can be stably obtained. COPYRIGHT: (C)2007,JPO&INPIT
|
