| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device for securing the work margin of source line contacts. SOLUTION: The non-volatile semiconductor memory device comprises active regions AA1, AA2, AA3, AA4, AA5, AA6, AA7, AA8, etc.; word lines WL0, WL1, WL2, WL3, and WLn groups to be orthogonally crossed with the active regions; a pair of bit line side selection gate lines SGD which are formed between the pair of word line groups and are in parallel with the word line groups; a pair of source line side selection gate lines SGS which are formed with the word line groups adjacent to the pair of word line groups, and are in parallel with the word line groups; memory cell transistors arranged in intersections between the active regions and the word lines; selection gate transistors arranged in the intersections of the active regions and the selection gate lines SGD, SGS; bit line contacts CB arranged between the pair of selection gate lines SGD so as to be connected to the active regions; and the source line contacts CS arranged between the pair of selection gate lines SGS so as to be connected to the active regions. The source line contacts CS are connected to the two adjacent active regions among the plurality of active regions. COPYRIGHT: (C)2007,JPO&INPIT
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