| 摘要 |
PROBLEM TO BE SOLVED: To detect the lateral crystal growth process and lengths and widths of lateral growth crystal grains, realize uniform lateral crystal length in the predetermined region of semiconductor film through feedback control from the detecting inforamtion obtained, and continuously realize reliable growth of lateral crystal grains with the SLS (Selective Laser Sintering) method, for the crystallization of a semiconductor film by irradiation of laser. SOLUTION: The process for crystal growth in the lateral direction by dissolving the semiconductor film formed on an insulating substrate with irradiation of the first laser beam is monitored using the reflected beam or transmitting beam of the second laser beam in such semiconductor film. The crystal growth process can be determined as the lateral growth or vertical growth from change in time and changing rate in time of the detected reflectivity or transmittivity, crystal lengths and crystal widths of the lateral growth can be obtained from the solidifying time, and these data can be used as the control information of the lateral crystal growth. COPYRIGHT: (C)2007,JPO&INPIT
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