发明名称 VAPOR DEPOSITION FILM FORMATION METHOD, PROTECTIVE FILM FORMATION METHOD, AND DEVICE FOR MANUFACTURING PLASMA DISPLAY PANEL
摘要 PROBLEM TO BE SOLVED: To provide a vapor deposition film formation method for forming a vapor deposition film having SrO and CaO as major components and having secondary-electron emission characteristics by preventing oxygen deficiency and intrusion of impurities in a film deposition process, and to provide a plasma display panel-manufacturing device using the method. SOLUTION: There is provided the method for forming the vapor deposition film on a substrate to be treated in a vacuum treating vessel by using an evaporation material having SrO and CaO as major components. In the vapor deposition, O<SB>2</SB>gas is introduced into the vacuum treating vessel while evacuating the vacuum treating vessel and the partial pressure of the O<SB>2</SB>gas in the vacuum treating vessel is controlled so as to be in the predetermined range, and the partial pressure of remaining impurities gas in the vacuum treating vessel is controlled so as to be not higher than the predetermined value (S12). The partial pressure of O<SB>2</SB>gas in the vacuum treating vessel is preferably set to be 1×10<SP>-3</SP>Pa to 0.1 Pa. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007119833(A) 申请公布日期 2007.05.17
申请号 JP20050312825 申请日期 2005.10.27
申请人 ULVAC JAPAN LTD 发明人 KURAUCHI TOSHIHARU
分类号 C23C14/24;C23C14/08;C23C14/30;H01J9/02;H01J11/40 主分类号 C23C14/24
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