| 摘要 |
An optical sensor and method for forming the same. The optical sensor structure includes (a) a semiconductor substrate, (b) first, second, third, fourth, fifth, and sixth electrodes and (c) first, second, and third semiconducting regions. The first and fourth electrodes are at a first depth. The second and fifth electrodes are at a second depth. The third and sixth electrodes are at a third depth. The first depth is greater than the second depth, and the second depth is greater than the third depth. The first, second, and third semiconducting regions are disposed between and in contact with the first and fourth electrodes, second and fifth electrodes, and third and sixth electrodes, respectively. The first, second, and third semiconducting regions are in contact with each other.
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