发明名称 SURFACE TREATMENT METHOD OF SAPPHIRE SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a surface treatment method of a sapphire substrate capable of removing easily and inexpensively scratches of some to tens of nanometers (nm) existing in the sapphire substrate surface after mirror finished surface, where a foreign substance is not adhered. <P>SOLUTION: A mixed solution of 100-200&deg;C concentrated phosphoric acid and concentrated sulfuric acid, in a container which does not include Si as a constituent and has the quality of the material which remains unaltered by a mixed solution of concentrated phosphoric acid and concentrated sulfuric acid, preferably made from polytetrafluoroethylene resin, is brought into contact with the mirror finished sapphire substrate surface pinched with a holding fixture which does not include Si as a constituent and has the quality of the material which remains unaltered by a mixed solution of phosphoric acid and sulfuric acid, preferably made from polytetrafluoroethylene resin. Further, the mixed solution of concentrated phosphoric acid and concentrated sulfuric acid is obtained such that the phosphoric acid and the sulfuric acid are mixed to be set as 1:3-3:1 by volume ratio. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007123486(A) 申请公布日期 2007.05.17
申请号 JP20050312626 申请日期 2005.10.27
申请人 SUMITOMO METAL MINING CO LTD 发明人 KAKIMOTO SANEYUKI
分类号 H01L21/308;C30B29/20;C30B33/10;H01L21/205;H01L33/32 主分类号 H01L21/308
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