| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique by which interwiring insulation degradation can be suppressed in Cu damascene wiring and insulated film. <P>SOLUTION: The Cu wiring film structure is provided with a Cu wiring film 3, a barrier metal film 4, and a barrier insulating film 2 on an inter-wire insulating film. In this case, a part (b) which is different in level is formed between the underside of the barrier insulating film 2 on the Cu wiring film 3 and/or the barrier metal film 4 and the underside of the barrier insulating film 2 on the inter-wire insulating film. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
