| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device provided with a sense amplifier which is small in area and can reduce inter adjacent bit line noise in the sense amplifier. <P>SOLUTION: In the sense amplifier of the semiconductor memory device, a pair of bit lines are twisted in the sense amplifier positioned at an almost center position between left and right transfer gates. Adjacent coupling noises are canceled by twisting the pair of bit lines of every other group. Thus, the sense amplifier in which the pair of bit lines are twisted without increasing layout area and influence of adjacent coupling noise in the sense amplifier never be affected and which is operated at high speed and stably and the semiconductor memory device provided with this sense amplifier can be obtained. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
