| 摘要 |
PROBLEM TO BE SOLVED: To provide an amplification type solid state imaging device with pixels having amplifying function arranged in a shape of matrix, capable of reducing transistors per 1 pixel, easy to develop, a layout of pixel region, and capable of reading out column unit. SOLUTION: Charge accumulators 3A, 3B are arranged at a clearance between photoelectric conversion areas 1A, 1C and at a clearance between photoelectric conversion areas 1B, 1D adjacent to each other in a perpendicular direction, respectively, so that they may be commonly used with respect to the photoelectric conversion regions adjacent to each other in the perpendicular direction within each group formed by the photoelectric conversion regions 1A, 1B, 1C, 1D profiled in 2-line and 2-train. Transfer transistors 2A, 2B are arranged in such a manner that they mount over a pair of ends corresponding to the charge accumulators 3A, 3B, respectively, so that they are commonly used with respect to the photoelectric conversion regions 1A, 1B, and the photoelectric conversion regions 1C, 1D adjacent to each other in a horizontal direction. COPYRIGHT: (C)2007,JPO&INPIT
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