| 摘要 |
A semiconductor device manufacturing method including forming a conductive layer and a silicon film on a semiconductor substrate including an active region, forming an emitter electrode containing a first impurity on the silicon film above the active region, partially etching the silicon film using the emitter electrode as a mask, forming an insulative film covering the semiconductor substrate and a side wall film covering a side surface of the emitter electrode, introducing a second impurity into the conductive layer and silicon film so that the second impurity reaches the active region to form an impurity region containing the second impurity in parts of the conductive layer and silicon film, and diffusing the first impurity contained in the emitter electrode into the silicon film to form in the silicon film a first region containing the first impurity and a second region free of the first impurity.
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