SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for forming a plurality of gate electrodes with adjusted work functions.

SOLUTION: A complementary metal oxide semiconductor (CMOS) device has: a PMOS transistor provided with at least two first gate electrodes 120 having a first parameter; and an NMOS transistor provided with at least two second gate electrodes 120 having a second parameter that is different from the first parameter. The first parameter and the second parameter comprise the thickness or the dopant profile of the gate electrode materials of the PMOS and NMOS transistors. The first and second parameters of at least two first gate electrodes and two second gate electrodes prescribe the work functions of the PMOS and the NMOS transistors, respectively.

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