| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal which can prevent the generation of the defective ingot by pulling the ingot in consideration of the deformation of the crucible and which can pull the plurality of ingots having a quality equivalent to that of the first ingot in a multiple pulling. SOLUTION: The method for producing a silicon single crystal comprises, firstly, calculating deformation tendency of a crucible 14 for mass production by measuring a deformation amount of a crucible 34 for experiment upon melting a silicon raw material and a history of supply power to a heater 38 for experiment. Next, the size of the crucible for mass production is measured, the silicon raw material of the amount equivalent to the amount supplied to the crucible for experiment is melted with the heater 18 for mass production, and an initial crucible external position with a predetermined gap X is measured before initiating pulling. Moreover, the deformation amount of the crucible for mass production upon melting the silicon raw material is predicted based on a relation between the deformation tendency of the crucible for experiment and the initial crucible external position, an initial crucible internal position when the predetermined gap is provided is predicted based on the deformation amount of the crucible for mass production, and an optimal pulling speed of the ingot is derived from predictive calculation to initiate the pulling of the ingot at the optimal pulling speed. COPYRIGHT: (C)2007,JPO&INPIT |
