SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, LIQUID CRYSTAL DISPLAY DEVICE, RFID TAG, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device, in which characteristics of the semiconductor device are improved by thinning a gate insulating film and a leakage current can be reduced, and a manufacturing method thereof. SOLUTION: An aluminum film 121a which is a metal film is formed on a polycrystalline semiconductor film 103a, and plasma oxidizing treatment is performed to the aluminum film, whereby an aluminum oxide film 104 is formed by oxidizing the aluminum film, and a silicon oxide film 100a is formed between the polycrystalline semiconductor film 103a and the aluminum oxide film. COPYRIGHT: (C)2007,JPO&INPIT