| 摘要 |
PROBLEM TO BE SOLVED: To evaluate a detailed ion implantation amount distribution within a semiconductor wafer surface without being restricted by an ion implantation amount. SOLUTION: In a wafer 2 for evaluation, only a plurality of transistors 10 for evaluation with the same structure are formed as distributed with the equal density all over a principal surface of a semiconductor wafer 2a. The transistor comprises: a source 10a and a drain 10b; a channel region 10c formed between the source 10a and the drain 10b; a gate oxide film 10d formed on the channel region 10c; and a gate electrode 10e formed on the gate oxide film 10d. Each of the transistors for evaluation is electrically disconnected from the other transistors 10 for evaluation by a field oxide film 8. The channel region 10c is formed by applying ion implantation to evaluate the ion implantation amount distribution. COPYRIGHT: (C)2007,JPO&INPIT
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