SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device provided with an FUSI electrode and a polysilicon resistor and capable of being easily manufactured, and to provide a method of manufacturing the same. SOLUTION: In the semiconductor device having an MIS transistor provided with an FUSI gate electrode and the polysilicon resistor, a part provided in a contact formation region of the polysilicon resistor is silicified simultaneously with the gate electrode or an impurity diffusion region. COPYRIGHT: (C)2007,JPO&INPIT