| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of improving the noise characteristics of return light as well as maintaining self oscillation to high temperature. SOLUTION: On an n-GaAs substrate 101, there are formed an n-GaAs buffer layer 102, an n-GaInP buffer layer 103, an n-(Al<SB>0.7</SB>Ga<SB>0.3</SB>)<SB>0.5</SB>In<SB>0.5</SB>P cladding layer 104, a un-(Al<SB>0.5</SB>Ga<SB>0.5</SB>)<SB>0.5</SB>In<SB>0.5</SB>P guide layer 105, an activity layer 106, a un-(Al<SB>0.5</SB>Ga<SB>0.5</SB>)<SB>0.5</SB>In<SB>0.5</SB>P guide layer 107, a p-(Al<SB>0.7</SB>Ga<SB>0.3</SB>)<SB>0.5</SB>In<SB>0.5</SB>P first cladding layer 108, a p-(Al<SB>0.75</SB>Ga<SB>0.25</SB>)<SB>0.5</SB>In<SB>0.5</SB>P barrier layer 109, a p-(Al<SB>0.5</SB>Ga<SB>0.5</SB>)<SB>0.5</SB>In<SB>0.5</SB>P light guide layer 110, and a p-GaInP saturable absorption layer 111. The band gap of the barrier layer 109 is larger than the band gap of the first cladding layer 108. COPYRIGHT: (C)2007,JPO&INPIT
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