| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for reducing the occurrence of crystal defects, or the like occurring from an element separation region. SOLUTION: The semiconductor device comprises a process (a) for forming a first recognition mark comprising a first groove 210 on a semiconductor layer 10; a process (b) for forming a well 20 on the semiconductor layer by the first recognition mark 210; a process (c) for forming a mask layer M1 that contains at least the first recognition mark, and has a first opening 42 in a plane shape that is larger than the plane shape of the first recognition mark on the semiconductor layer; a process (d) for forming a second recognition mark comprising a second groove by etching the semiconductor layer by the mask layer M1; a process (e) for forming an element separation insulating layer 22 on the semiconductor layer; and a process (f) for forming a transistor 100 on the semiconductor layer by the second recognition mark. COPYRIGHT: (C)2007,JPO&INPIT
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