发明名称 |
Formation of metal silicide layer over copper interconnect for reliability enhancement |
摘要 |
A method of fabrication of a sputtered metal silicide layer over a copper interconnect. We form a dielectric layer over a conductive layer. We form an interconnect opening in the dielectric layer. We form a copper layer at least filling the interconnect opening. We planarize the copper layer to form a copper interconnect in the interconnect opening. The copper interconnect is over polished to form a depression. We form metal silicide layer over the copper interconnect using a low temperature sputtering process. We can form a cap layer over the metal silicide layer.
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申请公布号 |
US2007111522(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20050273108 |
申请日期 |
2005.11.12 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LIM YEOW K.;LU WEI;HSIA LIANG C.;GUPTA JYOTI;SEET CHIM S.;ZHANG HAO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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