发明名称 |
Methods for manufacturing semiconductor devices |
摘要 |
A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.
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申请公布号 |
US2007111433(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20060594726 |
申请日期 |
2006.11.09 |
申请人 |
HIRASAWA SHINICHI;SHIGETA ATSUSHI;MIYANO KIYOTAKA;MATSUI YUKITERU;NISHIOKA TAKESHI;YANO HIROYUKI |
发明人 |
HIRASAWA SHINICHI;SHIGETA ATSUSHI;MIYANO KIYOTAKA;MATSUI YUKITERU;NISHIOKA TAKESHI;YANO HIROYUKI |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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