| 摘要 |
The semiconductor device according to the present invention comprises: a ferroelectric capacitor 42 formed above a semiconductor substrate 10 and including a lower electrode 36 , a ferroelectric film 38 formed on the lower electrode 36 and an upper electrode 40 formed on the ferroelectric film 38 ; a silicon oxide film 60 formed above the semiconductor substrate 10 and the ferroelectric capacitor 42 and having the surface planarized; a flat barrier film 62 formed on the silicon oxide film 60 with a silicon oxide film 61 formed therebetween, for preventing the diffusion of hydrogen or water; a silicon oxide film 64 formed above the barrier film 62 and having the surface planarized; and a flat barrier film 78 formed on the silicon oxide film 74 with a silicon oxide film 76 formed therebetween, for preventing the diffusion of hydrogen or water.
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