| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask where a recess is not formed in a position, corresponding to the linking pattern of a formed black matrix, even if the linking pattern is installed for preventing the destruction of a mask pattern due to electrostatic generated in a manufacturing process. <P>SOLUTION: In the photomask, a linking pattern 48P is installed between the mask pattern 46P, corresponding to the opening of the black matrix and a mask pattern 45P, corresponding to a margin. Notches 49 where the linking pattern is extended into the mask pattern, corresponding to the opening of the black matrix are arranged on both sides of the extending part 48P-P of the linking pattern in the mask pattern corresponding to the opening. The width of the linking pattern is 1 to 5 μm. <P>COPYRIGHT: (C)2007,JPO&INPIT |
