发明名称 POLISHING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for polishing a substrate at a high speed without scratching the surface polished of an SiO<SB>2</SB>insulating film, or the like. <P>SOLUTION: In the method for polishing a substrate by using abrasive powder containing slurry produced by dispersing cerium oxide grains composed of two or more crystallites and containing cerium oxide grains having a grain boundary into a medium, a new surface is created by destroying the grain boundary of cerium oxide grains with stress during polishing. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007123922(A) 申请公布日期 2007.05.17
申请号 JP20060335115 申请日期 2006.12.12
申请人 HITACHI CHEM CO LTD 发明人 YOSHIDA MASATO;ASHIZAWA TORANOSUKE;TERASAKI HIROKI;OTSUKI HIROTO;KURATA YASUSHI;MATSUZAWA JUN;TANNO KIYOHITO
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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