| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface treatment method and a surface treatment apparatus for the treatment of etching semiconductors wherein a ratio of etching speed, namely a shoulder selection ratio the etching speed of lower-layer resist of a multilayer resist film to form a fine pattern to that of an inorganic intermediate-layer thin film as a mask to control the dimension of a pattern is made high. SOLUTION: The surface treatment method uses a semiconductor plasma wherein an inorganic intermediate film 13 and an upper-layer resist film 12 are stacked on a lower-layer resist film 14. A gas comprised of nitrogen and oxygen is added with CO<SB>2</SB>made mainly of oxygen to make an etching gas, and an inorganic intermediate layer film 13 is etched less in a manner shown in shaving 16 (Fig.3(d)) from shaving 15 (Fig.3(c)). COPYRIGHT: (C)2007,JPO&INPIT
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