Layer forming method, layer forming apparatus, workpiece processing apparatus, interconnect forming method, and substrate interconnect structure

摘要

The present invention provides a layer forming apparatus including a material vaporizing section 108 for producing a material gas containing a metal-organic material by heating and vaporizing the metal-organic material in a solid or liquid state under pressure ranging from 0.01 Pa to atmospheric pressure, a workpiece holding section 100 for holding a workpiece, a workpiece heating section 104 for heating a surface of the workpiece to a temperature higher than a decomposition temperature of the metal-organic material vaporized by the material vaporizing section, and a material supply section 109 for locally forming an atmosphere of the material gas on the surface of the workpiece. The material supply section 109 is operable to form a metal layer or a metal compound layer on the surface of the workpiece by exposing at least a portion of the surface of the workpiece to the atmosphere of the material gas.