发明名称 |
Spacer Electrode Small Pin Phase Change Memory RAM and Manufacturing Method |
摘要 |
A memory device comprising a first pan-shaped electrode having a side wall with a top side, a second pan-shaped electrode having a side wall with a top side and an insulating wall between the first side wall and the second side wall. The insulating wall has a thickness between the first and second side walls near the respective top sides. A bridge of memory material crosses the insulating wall, and defines an inter-electrode path between the first and second electrodes across the insulating wall. An array of such memory cells is provided. The bridges of memory material have sub-lithographic dimensions.
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申请公布号 |
US2007108077(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20060424123 |
申请日期 |
2006.06.14 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG L.;CHEN SHIH H. |
分类号 |
B65D85/575 |
主分类号 |
B65D85/575 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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