发明名称 APPARATUS AND METHOD FOR MEMORY ASYNCHRONOUS ATOMIC READ-CORRECT-WRITE OPERATION
摘要 A memory controller and method that provide a read-refresh (also called "distributed-refresh") mode of operation, in which every row of memory is read within the refresh-rate requirements of the memory parts, with data from different columns within the rows being read on subsequent read-refresh cycles until all rows for each and every column address have been read, scrubbing errors if found, thus providing a scrubbing function that is integrated into the read-refresh operation, rather than being an independent operation. For scrubbing, an atomic read-correct-write operation is scheduled. A variable-priority, variable-timing refresh interval is described. An integrated card self-tester and/or card reciprocal-tester is described. A memory bit-swapping-within-address-range circuit, and a method and apparatus for bit swapping on the fly and testing are described.
申请公布号 US2007113150(A1) 申请公布日期 2007.05.17
申请号 US20060558452 申请日期 2006.11.10
申请人 CRAY INC. 发明人 RESNICK DAVID R.;SNYDER VAN L.;HIGGINS MICHAEL F.;GROSSMEIER ALAN M.;MARQUARDT KELLY J.;SCHWOERER GERALD A.
分类号 G11C29/00;G06F11/10;G06F11/20;G11C29/44 主分类号 G11C29/00
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