| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pattern layout that can prevent changes in transistor characteristics caused by rounding which generates inside a corner of a diffusive region or a gate wiring and by an alignment error of a mask. <P>SOLUTION: The pattern layout has a bend portion 13 bending into an L-shape in one side of a gate wiring 12 in a diffusive region 11 laid intersecting perpendicular to the gate wiring 12, wherein an auxiliary pattern 14 is formed in the diffusive region 11 in the other side of the gate wiring 12, the auxiliary pattern giving the same distance from the gate wiring as the distance between the bend portion 13 and the gate wiring 12. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
