| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid having superior storage stability by which the optimum polishing speed and polishing selection ratio for metal wiring material/barrier material/insulating material are adjusted, and dishing is reduced, in a barrier metal material CMP following bulk polishing for a metal wiring when a semiconductor device wafer is manufactured. <P>SOLUTION: This polishing liquid for polishing a barrier metal material on an inter-layer insulating material is an aqueous solution of a compound which is constituted by dispersing abrasive particles containing silicon dioxide and represented by a formula (1): R<SP>1</SP>-(CH<SB>2</SB>)<SB>m</SB>-(CHR<SP>2</SP>)<SB>n</SB>-COOH, and pH of the aqueous solution is 2.0-6.0. In the formula (1), m+n≤4, R<SP>1</SP>represents a hydrogen atom, a methyl group, an ethyl group or hydroxyl group, and R<SP>2</SP>represents the methyl group, the ethyl group, a benzene ring or the hydroxyl group. Here, when there are a plurality of R<SP>2</SP>, they may be same or different. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
