| 摘要 |
PROBLEM TO BE SOLVED: To provide a clean rear face by suppressing the staying-behind of foreign matters such as grinding waste and the traces of a chuck and a belt in an etching process of the rear face after a back-grinding process of a semiconductor wafer. SOLUTION: The method of manufacturing the semiconductor wafer includes a process of grinding the rear face of the semiconductor wafer, an ozone water washing process wherein the rear face of the semiconductor wafer which has gone through the grinding process is washed with a washing liquid consisting of ozone water, and a chemical etching process wherein the rear face of the semiconductor wafer which has gone through the ozone water washing process is etched with a mixed acid chemical containing hydrofluoric acid and nitric acid. COPYRIGHT: (C)2007,JPO&INPIT
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