METHOD FOR ACTIVATING IMPURITIES, LASER ANNEALER, SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME

摘要

PROBLEM TO BE SOLVED: To heat a position deep from the backside of a semiconductor substrate up to≥950°C while sustaining the intensity of pulse laser per unit area at a level not causing ablation in laser anneal. SOLUTION: The method for activating impurities introduced into a semiconductor substrate 44 comprises; a step for forming a semiconductor region by introducing impurities from the surface of the semiconductor substrate 44; and a step for irradiating a local region on the surface of the semiconductor substrate 44 with a plurality of pulse lasers 22 and 24 using a plurality of laser oscillators 12 and 16. In the irradiation step, a difference is formed between a timing for irradiating the local region with the first pulse laser 22 oscillated by the first laser oscillator 12 and a timing for irradiating the local region with the second pulse laser 24 oscillated by the second laser oscillator 16. The difference is regulated to≤700 nanoseconds. COPYRIGHT: (C)2007,JPO&INPIT