发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING PROBE CARD
摘要 PROBLEM TO BE SOLVED: To prevent breakage of a prober in probe inspection using a prober (thin film probe) having a probe formed by a manufacturing technology of a semiconductor integrated circuit device. SOLUTION: Grooves 33A are formed in the main surface of a wafer 31, a plurality of holes 33 are formed in the bottom of the grooves 33A, and then metal films 21A and 21B including probes 7A and 7B are formed using the holes 33 as the die. Wiring 23 and polyimide films 22 and 25 connected to the metal films 21A and 21B are formed on the main surface of the wafer 31, and then a thin film sheet is formed by removing silicon oxide film 34, the wafer 31 and a conductive film 35. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007121152(A) 申请公布日期 2007.05.17
申请号 JP20050315115 申请日期 2005.10.28
申请人 RENESAS TECHNOLOGY CORP 发明人 KAWAKAMI KENJI;AMARI HIROYUKI;NARIZUKA YASUNORI
分类号 G01R1/073;H01L21/66 主分类号 G01R1/073
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