发明名称 |
CHEMICAL MECHANICAL POLISHING PROCESS |
摘要 |
A copper/barrier CMP process includes (a) providing a substrate having a bulk metal layer and a barrier layer; (b) polishing the substrate with a first hard polishing pad on a first platen to substantially remove an upper portion of the bulk metal layer, wherein the first hard polishing pad has a hardness of above 50 (Shore D); (c) polishing the substrate with a second hard polishing pad on a second platen to remove residual copper, thereby exposing the barrier layer, wherein the second hard polishing pad has a hardness of above 50 (Shore D); and (d) polishing the substrate with a third hard polishing pad on a third platen to remove the barrier layer, wherein the third hard polishing pad has a hardness ranging between 40-50 (Shore D).
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申请公布号 |
US2007111517(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20050164204 |
申请日期 |
2005.11.14 |
申请人 |
NEO BOON-TIONG;LIN CHIN-KUN;LAU LEE-LEE |
发明人 |
NEO BOON-TIONG;LIN CHIN-KUN;LAU LEE-LEE |
分类号 |
H01L21/4763;H01L21/302;H01L21/461 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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