发明名称 Semiconductor memory device and method for driving semiconductor memory device
摘要 A semiconductor memory device includes a memory cell including a floating body region in an electrically floating state and storing data by accumulating or discharging charges in or from the floating body region; a memory cell array including a plurality of the memory cells; a word line connected to a gate of the memory cell; a bit line connected to a diffusion layer of the memory cell; a sense amplifier connected to the bit line; and a decoder applying a first potential to the word line when data "1" is written to the memory cell and applying a second potential different from the first potential to the word line when data "0" is written to the memory cell.
申请公布号 US2007109844(A1) 申请公布日期 2007.05.17
申请号 US20060476878 申请日期 2006.06.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HIGASHI TOMOKI;OHSAWA TAKASHI
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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