发明名称 |
Semiconductor memory device and method for driving semiconductor memory device |
摘要 |
A semiconductor memory device includes a memory cell including a floating body region in an electrically floating state and storing data by accumulating or discharging charges in or from the floating body region; a memory cell array including a plurality of the memory cells; a word line connected to a gate of the memory cell; a bit line connected to a diffusion layer of the memory cell; a sense amplifier connected to the bit line; and a decoder applying a first potential to the word line when data "1" is written to the memory cell and applying a second potential different from the first potential to the word line when data "0" is written to the memory cell.
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申请公布号 |
US2007109844(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20060476878 |
申请日期 |
2006.06.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIGASHI TOMOKI;OHSAWA TAKASHI |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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