发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
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申请公布号 |
US2007108446(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20060598669 |
申请日期 |
2006.11.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
AKIMOTO KENGO |
分类号 |
H01L29/04;G02F1/1333;G02F1/1368;G09F9/30;H01L21/28;H01L21/316;H01L21/336;H01L29/786;H01L51/50;H05B33/10 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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