| 摘要 |
The present invention relates to fluorinated silicate glass (FSG) with low dielectric constant and improved gap-fill characteristics. In the present method, a fluorinated silicon source, an optional fluorine source, an optional carbon source, a hydrogen source, and an oxygenator are used as the reactant gases. Inert or carrier gas(es) may also be used. In accordance with the present invention, the reactant gas mixture does not comprise a silane compound having the general formula Si<SUB>x</SUB>H<SUB>y</SUB>, wherein x has a range of 1 to 2, y has a range of 4 to 6. The material deposited is thus referred to herein alternatively as "Si<SUB>x</SUB>F<SUB>y</SUB>-only FSG" or "Si<SUB>x</SUB>F<SUB>y</SUB>-only fluorinated oxide" ("SOFO").
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