| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a plasma composition for selectively eliminating a high-k layer such as HfO<SB>2</SB>on a silicon or silicon oxide film. SOLUTION: In boron-halogen plasma for selectively etching at least two materials, the etching speed of a first material is reduced to approximately zero by depositing a protective BxNy layer on the surface of the first material, and thus, deposition of the BxNy layer on a second material can be avoided. COPYRIGHT: (C)2007,JPO&INPIT |
