| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently increase a bit line voltage value in reading data without adding an ion injection process for adjusting a threshold voltage. SOLUTION: When reading out a semiconductor memory device where each memory cell MCa includes a write-in transistor, a read-out transistor TR, and capacitor C and is shared with two or more cells of which the write-in word line WWL and the read-out word line RWL arranged in parallel in the row direction, and the bit line RBL is shared with two or more memory cells MCs and MCu arranged in the column direction, a constant current driving means TD is arranged between the bit line RBL and a reference potential GND, applying a power source voltage Vcc to the read-out word line RWLs of a selected memory cell MCs to be read, applying 0[V] to the read-out word line RWLu of a non-selected memory cell MCu, and turning on the constant current driving means. COPYRIGHT: (C)2007,JPO&INPIT
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