发明名称 |
Composite gate structure in an integrated circuit |
摘要 |
An integrated circuit having composite gate structures and a method of forming the same are provided. The integrated circuit includes a first MOS device, a second MOS device and a third MOS device. The gate stack of the first MOS device includes a high-k gate dielectric and a first metal gate on the high-k gate dielectric. The gate stack of the second MOS device includes a second metal gate on a high-k gate dielectric. The first metal gate and the second metal gate have different work functions. The gate stack of the third MOS device includes a silicon gate over a gate dielectric. The silicon gate is preferably formed over the gate stacks of the first MOS device and the second MOS device.
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申请公布号 |
US2007111425(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20070648964 |
申请日期 |
2007.01.03 |
申请人 |
WU I-LU;CHEN KUANG-HSIN;HAN LIANG-KAI |
发明人 |
WU I-LU;CHEN KUANG-HSIN;HAN LIANG-KAI |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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