发明名称 MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a memory device, including a nonvolatile memory, such as a write-once memory device for reducing the number of manufacturing steps, and permitting a reduction in cost, and to provide a semiconductor device that uses the memory device. SOLUTION: A memory device has a first conductive film 113, an insulating film 114 formed on the first conductive film 113, an opening part 115 and a contact hole 116 that are formed in the insulating film 114, and a second conductive film 117 that is formed on the insulating film 114. The insulating film exists between the first conductive film 113 and the second conductive film 117 that is formed in the opening part. In the contact hole 116, the first conductive film 113 and the second conductive film 117 are electrically connected. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007123864(A) 申请公布日期 2007.05.17
申请号 JP20060264152 申请日期 2006.09.28
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ASAMI YOSHINOBU
分类号 H01L27/10;H01L29/786 主分类号 H01L27/10
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