| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light emitting element capable of easily and accurately forming a minute irregular structure of the semiconductor light emitting element having the minute irregular structure of an arbitrary shape on a light exit face side. <P>SOLUTION: The semiconductor light emitting element 1 includes a light emitter 12 on one surface side of a sapphire substrate 10 and a minute irregular structure 11 on the other surface side, the light exit face side. The method of manufacturing the semiconductor light emitting element comprises: a resist layer forming process of forming an organic material resist layer 30 on the other surface side of the sapphire substrate 10; a transfer process of transferring an irregular pattern 51 to the resist layer 30 using a mold material 50, on which there is formed an irregular pattern 51 designed in accordance with the minute irregular structure 11; and a pattern forming process of forming the minute irregular structure 11 on the other surface side of the sapphire substrate 10. As the foregoing organic material a novolac-based resin is used, and in the pattern forming process the resist layer 30 and the sapphire substrate 10 are etched by anisotropic dry etching using chlorine-based gas. <P>COPYRIGHT: (C)2007,JPO&INPIT |
