发明名称 |
GAIN, CELL, AND METHOD FOR MANUFACTURING AND USING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide improved gain and cell and a method for manufacturing and using the same. <P>SOLUTION: In a first embodiment, the memory cell of a substrate containing (1) a PFET having almost planar orientation to the surface of the substrate and (2) an NFET coupled to an almost planar PFET is provided. The orientation of the NFET inside the substrate is almost vertical to that of the PFET. The invention includes many other embodiments. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
申请公布号 |
JP2007123893(A) |
申请公布日期 |
2007.05.17 |
申请号 |
JP20060290462 |
申请日期 |
2006.10.25 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
MANDELMAN JACK A;CHENG KANGGUO |
分类号 |
H01L21/8242;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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